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| ZXMN6A25DN8 DUAL 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS= 60V: RDS(ON)= 0.055 DESCRIPTION ; ID= 4.7A This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES * Low on-resistance * Fast switching speed * Low gate drive * Low profile SOIC package SO8 APPLICATIONS * DC - DC Converters * Power Management Functions * Motor control ORDERING INFORMATION DEVICE ZXMN6A25DN8TA ZXMN6A25DN8TC REEL 7'` 13'` TAPE WIDTH 12mm 12mm QUANTITY PER REEL 500 units 2500 units PINOUT DEVICE MARKING * ZXMN 6A25D Top view PROVISIONAL ISSUE B - JUNE 2003 1 SEMICONDUCTORS ZXMN6A25DN8 ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @V GS =10V; T A =25C @V GS =10V; T A =70C @V GS =10V; T A =25C Pulsed Drain Current (c) (b) (b) (d) (b) (d) (a) (d) SYMBOL V DSS V GS ID I DM IS I SM PD PD PD T j :T stg (c) LIMIT 60 20 4.7 3.7 3.6 22 3.5 22 1.25 10 1.8 14 2.1 17 -55 to +150 UNIT V V A A A A A A W mW/C W mW/C W mW/C C Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Power Dissipation at T A =25C Linear Derating Factor Power Dissipation at T A =25C (a) (e) Linear Derating Factor Power Dissipation at T A =25C (b) (d) Linear Derating Factor (a) (d) Operating and Storage Temperature Range THERMAL RESISTANCE PARAMETER Junction to Ambient Junction to Ambient Junction to Ambient NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t 10 sec. (a) (d) (a) (e) (b) (d) SYMBOL R JA R JA R JA VALUE 100 70 60 UNIT C/W C/W C/W (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02, pulse width=300 s - pulse width limited by maximum junction temperature. (d) For a dual device with one active die. (e) For a device with two active die running at equal power. PROVISIONAL ISSUE B - JUNE 2003 2 SEMICONDUCTORS ZXMN6A25DN8 TYPICAL CHARACTERISTICS PROVISIONAL ISSUE B - JUNE 2003 3 SEMICONDUCTORS ZXMN6A25DN8 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) (1) (3) SYMBOL MIN. TYP. MAX. UNIT CONDITIONS V 1.0 100 V 0.055 0.075 A nA I D =250 A, V GS =0V V DS =60V, V GS =0V V GS =20V, V DS =0V I =250 A, V DS = V GS D V (BR)DSS I DSS I GSS V GS(th) R DS(on) g fs C iss C oss C rss t d(on) tr t d(off) tf Qg Qg Q gs Q gd 60 1.0 V GS =10V, I D =3.6A V GS =4.5V, I D =3A S V DS =15V,I D =4.5A Forward Transconductance DYNAMIC (3) Input Capacitance Output Capacitance 10.2 1063 104 64 pF pF pF V DS =30V , V GS =0V, f=1MHz Reverse Transfer Capacitance SWITCHING (2) (3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) 3.8 4.0 26.2 10.6 11.0 20.4 4.1 5.1 ns ns ns ns nC nC nC nC V DS =30V,V GS =10V, I D =4.5A V DS =30V,V GS =5V, I D =4.5A V DD =30V, I D =1A R G 6.0 , V GS =10V V SD t rr (3) 0.85 22.0 21.4 2% . 0.95 V ns nC T J =25C, I S =5.5A, V GS =0V T J =25C, I F =2.2A, di/dt= 100A/ s Reverse Recovery Time (3) Reverse Recovery Charge NOTES Q rr (1) Measured under pulsed conditions. Width=300 s. Duty cycle (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. PROVISIONAL ISSUE B - JUNE 2003 4 SEMICONDUCTORS ZXMN6A25DN8 TYPICAL CHARACTERISTICS PROVISIONAL ISSUE B - JUNE 2003 5 SEMICONDUCTORS ZXMN6A25DN8 TYPICAL CHARACTERISTICS PROVISIONAL ISSUE B - JUNE 2003 6 SEMICONDUCTORS ZXMN6A25DN8 PACKAGE OUTLINE PACKAGE DIMENSIONS INCHES DIM D MILLIMETRES MIN 1.35 0.10 4.80 5.80 3.80 0.40 MAX 1.75 0.25 5.00 6.20 4.00 1.27 MIN A A1 E H MAX 0.069 0.010 0.197 0.244 0.157 0.050 0.053 0.004 0.189 0.228 0.150 0.016 D H L Pin 1 E c L A e Seating Plane 0.050 BSC 0.013 0.008 0 0.020 0.010 8 0.020 1.27 BSC 0.33 0.19 0 0.25 0.51 0.25 8 0.50 A1 b e b c CONTROLLING DIMENSIONS ARE IN INCHES APPROX IN MILLIMETRES h 0.010 (c) Zetex plc 2003 Europe Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com PROVISIONAL ISSUE B - JUNE 2003 7 SEMICONDUCTORS |
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